Call for Papers:

IEEE Micro Special Issue on Emerging Memory Technologies

Final Submission Deadline
June 29, 2018

IEEE Micro Special Issue on Emerging Memory Technologies

Submission deadline: June 29, 2018
Publication: Jan/Feb 2019

Guest Editors:
Yuan Xie (University of California, Santa Barbara)
Jishen Zhao (University of California, San Diego)

Technology scaling of traditional memory technologies, such as SRAM and DRAM, is increasingly constrained by fundamental technology limits. The recent research progress of various emerging memory technologies, such as 3D integrated memory, phase-change RAM (PCM), spin-transfer-torque magnetoresistive RAM (STT-MRAM), and resistive RAM (ReRAM), have drawn tremendous attentions from both academy and industry. As these emerging memory technologies are maturing, it is important for us to understand their pros and cons for improving the performance, power, reliability, and scalability of future computer systems. As such, these technologies bring many research opportunities and challenges for novel architectures, systems, applications, design tools, compilers, and programming models and languages.

This special issue of IEEE Micro will explore exciting academic and industrial research on all topics relating to emerging memory technologies. Such topics include, but are not limited to:
– Workload characterization and benchmarks for applications that are likely to benefit from emerging memory technologies.
– Architectures and microarchitectures for emerging memory technologies.
– Design tools for emerging memory technologies.
– Operating system support for emerging memory technologies.
– Compiler and programming language design for emerging memory technologies.
– Reliability, resiliency, and scalability.
– Prototype experiences with emerging memory technologies.

Please see the Write for Us page and the general author guidelines for more information. Please submit electronically through ScholarOne Manuscripts, selecting this special-issue option.

Contact the guest editors at, or the EiC at